Printing of Quasi‐2D Semiconducting β‐Ga₂O₃ in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin

Abstract

Quasi‐2D β‐Ga 2 O 3 is a rediscovered metal‐oxide semiconductor with the advantage of an ultrawide bandgap of 4.6–4.9 eV. It is reported to be a promising material for next‐generation power and radio‐frequency electronics. However, realizing macroelectronics based on β‐Ga 2 O 3 film is challenging due to the nonuniformity and improper thickness of the film. Herein, a straightforward and rapid impact fabrication method for depositing high‐quality β‐Ga 2 O 3 films is introduced. Structural and film properties of the deposited β‐Ga 2 O 3 are characterized using scanning electron microscopy, X‐ray diffraction, and atomic force microscopy. To illustrate the applicability of the deposited β‐Ga 2 O 3 in constructing electronic devices, β‐Ga 2 O 3 ‐based field‐effect transistors (FETs) are fabricated with a source–drain spacing of 400 μm. Films of β‐Ga 2 O 3 exhibit a good performance with carrier mobilities as high as 21.3 cm 2 V –1 s –1 , transconductances of 1.4 μS, and on/off current ratios of 10 4 . The device performances indicate a big potential of β‐Ga 2 O 3 for future power device applications. The method paves the way for future application of β‐Ga 2 O 3 in electronics. It also provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.