Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge - Concepedia

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Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

11

Citations

31

References

2019

Year

E. Igumbor, G.M. Dongho-Nguimdo, R.E. Mapasha, W.E. Meyer

Journal of Materials Science

Materials ScienceInorganic ChemistryDefect LevelsEngineeringApplied PhysicsQuantum MaterialsCondensed Matter PhysicsDefect FormationElectronic PropertiesElectronic Structure

References

	Year	Citations

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