G.M. Dongho-Nguimdo - Concepedia

Author

G.M. Dongho-Nguimdo

National Institute for Theoretical Physics ORCID

Also Known As

G. M. Dongho Nguimdo, G. M. Dongho-Nguimdo, G.M. Dongho-Nguimdo, GM Dongho-Nguimdo, Guy Moise Dongho-Nguimdo, Guy Moïse Dongho-Nguimdo, M. Dongho-Nguimdo

Publications

149

Citations

H-Index

Concepts

All Affiliations

National Institute for Theoretical Physics University of the Witwatersrand University of South Africa University of Buea Shendi University

About

G.M. Dongho-Nguimdo is an author at National Institute for Theoretical Physics specializing in materials science, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	108
2	Materials Science	5	5	108
3	Applied Physics	3	3	81
4	Natural Sciences	2	2	73
5	Chemistry	1	1	58

G.M. Dongho-Nguimdo

Publications

119

Citations

H-Index

Page 1

	Year	Citations
A density functional (PBE, PBEsol, HSE06) study of the structural, electronic and optical properties of the ternary compounds AgAlX2 (X = S, Se, Te) G.M. Dongho-Nguimdo, Daniel P. Joubert The European Physical Journal B Materials ScienceInorganic ChemistryIi-vi SemiconductorOptical MaterialsEngineering	2015	58
Pressure effect on structural stability and optical absorption of triclinic NbS3 from DFT and many-body perturbation calculations Bonaventure Dusabe, G.M. Dongho-Nguimdo, Daniel P. Joubert The European Physical Journal B Materials ScienceOptical MaterialsEngineeringPhysicsOptical Properties	2020	15
Structural stability and electronic properties of AgInS2 under pressure G.M. Dongho-Nguimdo, George S. Manyali, Mahmud Abdusalam, The European Physical Journal B Materials ScienceEngineeringSurface ScienceMaterial PhysicElectronic Properties	2016	12
Structural stability, electronic, optical and lattice thermal conductivity properties of bulk and monolayer PtS_2 Hamza Adam Haroun Mohammed, G.M. Dongho-Nguimdo, Daniel P. Joubert Materials Today Communications Materials ScienceMonolayer Pts_2Ii-vi SemiconductorEngineeringPhysics	2019	12
Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge E. Igumbor, G.M. Dongho-Nguimdo, R.E. Mapasha, Journal of Materials Science Materials ScienceInorganic ChemistryDefect LevelsEngineeringApplied Physics	2019	11
Comprehensive first-principles study of bulk, bilayer, and monolayer α-PtO2 properties Hamza Adam Haroun Mohammed, G.M. Dongho-Nguimdo, Daniel P. Joubert Physica E Low-dimensional Systems and Nanostructures	2020	11

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