Concepedia

Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Bader Alharthi, Wei Dou, Perry C. Grant, Joshua M. Grant, Timothy A. Morgan, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem,

Applied Surface Science · 2019 · 18 citations · 32 references

DOI

Concepts

References

32

High-performance Ge-on-Si photodetectors

Jürgen Michel, Jifeng Liu, Lionel C. Kimerling · Nature Photonics · 2010 · 1.6K citations

Lasing in direct-bandgap GeSn alloy grown on Si

Stephan Wirths, Richard Geiger, Nils von den Driesch et al. · Nature Photonics · 2015 · 1.2K citations

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High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin C. Lee et al. · Applied Physics Letters · 1999 · 677 citations

, , +16

Analysis of enhanced light emission from highly strained germanium microbridges

Martin Süess, Richard Geiger, Renato Amaral Minamisawa et al. · Nature Photonics · 2013 · 415 citations

, , +10

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

M. Schreck, S. Gsell, Rosaria Brescia et al. · Scientific Reports · 2017 · 249 citations · Full text

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