Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Abstract

For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> ), high operation speed (<;20ns), good data retention (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> @85C), low operation voltage (<;3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.