Enhanced Stability of Sr-Doped Aqueous In₂O₃ Thin-Film Transistors Under Bias/Illumination/Thermal Stress

Abstract

An aqueous solution method has been used to fabricate SrInO thin-film transistors (TFTs) in this paper. Strontium has been doped in In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as a carrier suppressor and proved to be associated with the reduction of the oxygen-related defect state. A small amount of Sr doping can effectively improve the stability of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> TFTs under bias/illumination/thermal stress. The capacitance-voltage measurement and X-ray photoelectron spectroscopy measurement are tested to observe and analyze the variation of interface defect state and oxygen vacancy. The density of states is calculated to further confirm the decrease of the total trap state with the increase of the Sr content.