Ultra-High Endurance and Low I<inf>OFF</inf> Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory

Abstract

New selector materials with very-low I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> and optimum V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> . based on As-Se-Ge chalcogenides are studied. An optimized composition is proposed, which achieves a good trade-off between thermal stability and cycling endurance and it is successfully integrated with PCM in a 3D stackable pillar structure. SET/RESET operation are demonstrated with ∼2V memory window. Selector is able to deliver 1mA ON current (7.9 MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) and fast speed (10 ns). More than 1E12 read cycling endurance is achieved in 1S1R <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{OTS}+\text{PCM})$</tex> device due to the excellent endurance of the selector.