IBM Journal of Research and Development · 1969 · 14 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignElectric CircuitsIntegrated Circuit DesignIntegrated Circuit DevicesInterconnect TechnologySemiconductor Device MaterialsFabricationJunction ResistanceSwitching Devices
The design considerations for a semiconductor crosspoint consisting of an SCR-diode-resistor circuit are presented and the fabrication process is briefly reviewed. These crosspoints have an ON-resistance of three to four ohms and a capacitance of approximately three picofarads. They can be interconnected on ceramic modules to form matrix arrays for use in telephone line switching applications.
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J.L. Moll, Molly L. Tanenbaum, James M. Goldey et al. · Proceedings of the IRE · 1956 · 157 citations
Four-Terminal P-N-P-N Transistors
J. Ebers · Proceedings of the IRE · 1952 · 52 citations
J. Lindmayer, W. Schneider · Solid-State Electronics · 1967 · 50 citations