Two-Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches

Concepts

EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCircuit SwitchingIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsSemiconductor Device MaterialsSwitching TechniquesComplementary Metal-oxide-semiconductor DevicesP-n Junction CharacteristicsResistive SwitchingResistive Switching MaterialsSwitching Devices

Abstract

By making use of an emitter region shorted by a metallic contact to an adjacent base region, a new form of p-n-p-n switch is obtained. Several new structures are described, including a symmetrical (or ac) switch. Typical experimental results on switches which breakdown in the range from 25 to 40 v are presented.

References

P-N-P-N Transistor Switches

J.L. Moll, Molly L. Tanenbaum, James M. Goldey et al. · Proceedings of the IRE · 1956 · 157 citations

Engineering, Electrical Engineering, Materials Science +16

Four-Terminal P-N-P-N Transistors

J. Ebers · Proceedings of the IRE · 1952 · 52 citations

Engineering, Electrical Engineering, Circuit Theory +16

The Electrical Characteristics of Silicon P-N-P-N Triodes

I.M. Mackintosh · Proceedings of the IRE · 1958 · 44 citations

Engineering, Electrical Engineering, Materials Science +15

Multiterminal P-N-P-N Switches

Richard W. Aldrich, N. Holonyak · Proceedings of the IRE · 1958 · 42 citations

Engineering, Electrical Engineering, Materials Science +16

p-n-p-n Switching Diodes

A.K. Jonscher · Journal of Electronics and Control · 1957 · 15 citations

Engineering, Electrical Engineering, Materials Science +16