A 24.3Me⁻ Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

Abstract

This paper presents a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$16\mu\mathrm{m}$</tex> pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$95\text{ke}^{-}/\mu \mathrm{m}^{2}$</tex> and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{a}\sim 10^{12}\text{cm}^{-3}$</tex> p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.