A voltage-transient method for characterizing traps in GaN HEMTs - Concepedia

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A voltage-transient method for characterizing traps in GaN HEMTs

15

Citations

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References

2019

Year

Xiang Zheng, Shiwei Feng, Yifu Gao, Yamin Zhang, Yunpeng Jia, Shijie Pan

Microelectronics Reliability

Electrical EngineeringGan HemtsEngineeringApplied PhysicsGan Power Device

References

	Year	Citations

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