First Demonstration of Compact, Ultra-Thin Low-Pass and Bandpass Filters for 5G Small-Cell Applications

Abstract

Package-integrated and ultra-thin low-pass filter (LPF) and bandpass filter (BPF) with footprint smaller than 0.5λ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> × 0.5λ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> × 0.025λ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> at the operating frequencies of 28- and 39-GHz bands are presented for 5G and mm-wave small-cell application. Such package integration of 5G filters with ultrashort 3-D interconnects allows for low interconnect losses that are similar to that of on-chip filters, but low component insertion loss of off-chip discrete filters. These thin-film filters exhibit a cross-sectional height of 188.5 μm and can be utilized either as embedded components or integrated passive devices in module packages. Three topologies of LPF and BPF in total are modeled, designed, and fabricated on precision thin-film buildup layers on glass substrate as a core. Large-area panelcompatible semiadditive patterning (SAP) process is utilized to form high-precision topologies to aid the low-cost fabrication of ultraminiaturized filters. SAP also enables the realization of ultra-thin traces to precisely model high-impedance inductive lines compared to conventional subtractive etching and printing techniques. This results in filters with low insertion loss, low VSWR, and high selectivity. The simulated and measured results of filters show an excellent correlation.