Effect of Hole-Selective Molybdenum Oxide Work Function and Silicon Wafer Resistivity on Dopant-Free Asymmetric Silicon Heterostructure Solar Cell

Abstract

The undesired light absorption and fabrication complexities in p-type a-Si:H associated with the existent silicon heterostructure solar cell can be alleviated by incorporating molybdenum oxide (MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> , x<;3) hole-selective contact. Due to its higher work function, MoOx induces an interface inversion for effective transportation and segregation of charge carriers. In this work, comparative studies of the dopant-free asymmetric silicon heterostructure solar cells employing n-type and p-type crystalline silicon wafers have been considered by using Silvaco TCAD simulator. Effects of various parameters on the PV characteristics such as MoOx work function, interfacial charge and wafer doping concentration (resistivity) have been studied and investigated. It has been shown that utilizing n-type silicon wafer resulted in a smaller valence band offset for holes leading to a higher conversion efficiency of 22.6% as compared to 18.8% with the p-type wafer.