Ge-Based Asymmetric RRAM Enable $8{F}^{2}$ Content Addressable Memory

Abstract

In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible process. Due to the adoption of a thin AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> interfacial layer, the TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Ge structured RRAM shows both excellent switching behavior and diodelike rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory was proposed and demonstrated, and its function was verified by experimental measurements. This novel two-asymmetric RRAM-based TCAM cell with only 8F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> size is very promising for future energy and area-efficient IoT and Internet applications.