Ran Cheng

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$</tex> </formula> Passivation

Xiao Gong, Genquan Han, Fan Bai et al. · IEEE Electron Device Letters · 2013 · 100 citations

Sub Xmlns, Engineering, Carrier Mobility +17

Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

Ran Cheng, Wei Wang, Xiao Gong et al. · ECS Journal of Solid State Science and Technology · 2013 · 69 citations

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO₂-Based Thin Films

Jiajia Chen, Chengji Jin, Xiao Yu et al. · IEEE Transactions on Electron Devices · 2022 · 62 citations

Ultra fast (<1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs

Yiming Qu, Xi Lin, Junkang Li et al. · 2017 · 46 citations

Engineering, Semiconductor Device, Nanoelectronics +16

The past and future of multi-gate field-effect transistors: Process challenges and reliability issues

Ying Sun, Xiao Yu, Rui Zhang et al. · Journal of Semiconductors · 2021 · 40 citations

Engineering, Reliability Characteristics, Silicon On Insulator +17