Publication | Closed Access
Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering
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Citations
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References
2015
Year
N-in Ga1−n/p-si Hetero-junctionsElectrical EngineeringEngineeringPhysicsNanoelectronicsApplied PhysicsTemperature DependenceRf MagnetronSemiconductor MaterialMicroelectronicsSemiconductor Device
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