Thi Tran Anh Tuan

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Thi Tran Anh Tuan, Dong–Hau Kuo · Materials Science in Semiconductor Processing · 2014 · 31 citations

Electrical Engineering, Engineering, Rf Semiconductor +4

Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5

Thi Tran Anh Tuan, Dong–Hau Kuo, Albert Daniel Saragih et al. · Materials Science and Engineering B · 2017 · 31 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7

Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes

Thi Tran Anh Tuan, Dong–Hau Kuo, Cheng-Che Li et al. · Journal of Materials Science Materials in Electronics · 2014 · 30 citations

Wide-bandgap Semiconductor, Electrical Engineering, Sputtering-made N-type Gan +6

Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer

Albert Daniel Saragih, Dong–Hau Kuo, Thi Tran Anh Tuan · Journal of Materials Science Materials in Electronics · 2016 · 25 citations

Materials Science, P-cusbs2 Together, Electrical Engineering +9

Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Dong–Hau Kuo, Thi Tran Anh Tuan, Cheng-Che Li et al. · Materials Science and Engineering B · 2014 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +10