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Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Materials EngineeringMaterials ScienceElectrical EngineeringRf Reactive SputteringEngineeringRf SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceP-ingan/n-gan Junction DiodeMicroelectronicsOptoelectronicsMg-doped Inxga1−xn