Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5 - Concepedia

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Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5

31

Citations

37

References

2017

Year

Thi Tran Anh Tuan, Dong–Hau Kuo, Albert Daniel Saragih, Guan-Zhang Li

Materials Science and Engineering B

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringHigh Rectification RatioApplied PhysicsGan Power DeviceLow LeakageElectrical Properties

References

	Year	Citations

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