ACS Photonics · 2018 · 24 citations · 24 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLuminescent MaterialsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum Nitride DevicesBand GapBroadband Light SourcesDefect-related LuminescenceElectronic Band GapLattice DefectsLight-emitting DevicesWhite-light Emitting Materials
Alumina nitride bulk single crystals (AlN BSCs) were grown using a two-heater Physical Vapor Transport (th-PVT) method. The crystal contains massive lattice defects including aluminum vacancy (VAl) and oxygen substitution (ON). The photoluminescence (PL) spectrum of the crystal demonstrated a broad emission covering from 250 to 1000 nm. By study the PL spectrum, abundant midgap states in the wide band gap of AlN were nailed down. Based on the crystals, metal-AlN-metal Schottky devices were fabricated. These devices emitted high quality white light with color rendering index (CRI) over 90 under a bias of 60 V. Moreover, it was found that the white light emitting property of AlN BSCs was adjustable through changing impurity density and device structure. This research aims to pave a new way for solid-state white light source.
24
Intrinsic White-Light Emission from Layered Hybrid Perovskites
Emma R. Dohner, Adam Jaffe, Liam R. Bradshaw et al. · Journal of the American Chemical Society · 2014 · 1.1K citations