Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S_MIN of 35 mV/Decade

Abstract

We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability to reach a point subthreshold swing of 35 mV/decade at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 0.05 V. Furthermore, the impact of drain, channel, and source diameter scaling on the subthreshold swing and currents are studied. Impact of gate-overlap is more evident for devices with highly scaled source due to strong reduction of the current. Furthermore, small channel diameter makes these devices more susceptible to random telegraph signal noise.