Growth mechanisms of sulfur‐rich plasma polymers: Binary gas mixtures versus single precursor

Abstract

Thiol (SH)‐terminated surfaces have gained interest over the past years due to their potential applications, especially in the biomedical field. In this work, SH‐terminated films have been prepared by “co‐polymerizing” gas mixtures of acetylene (C 2 H 2 ) and hydrogen sulfide (H 2 S) using low‐pressure r.f. plasma‐enhanced chemical vapor deposition. R.f. power greatly influences the deposition rate, sulfur content, [S], and thiol concentration, [SH], of the films, as confirmed by XPS (both before and after chemical derivatization), FTIR, and mass spectrometry measurements. These data are compared with those obtained in a similar discharge by using a single molecule precursor, propanethiol. Among other differences, it is demonstrated that [SH] is higher when using binary gas mixtures compared to the single molecule precursor.