Development of double strained Si channel for heterostructure on insulator MOSFET

Abstract

Strained Silicon Technology is known for its ability to enhance carrier mobility while simultaneously boost MOSFET devices performance. Double strained silicon channel MOSFET with strained silicon-germanium sandwiched in between has been developed, incorporating quantum effects for counter balancing the reduced threshold voltage. A comparison of the conventional strained silicon on relaxed silicon-germanium with the double strained silicon channel MOSFET is perceived. Based on the simulation results, the heterostructure MOS channel has shown superior device characteristics with a small reduction in the threshold voltage by increasing strain in the channel region.