Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications - Concepedia

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Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

20

Citations

37

References

2017

Year

J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, D. Nirmal

AEU - International Journal of Electronics and Communications

Electrical EngineeringEngineeringRf SemiconductorPhysicsFuture SubmillimetreNanoelectronicsElectronic EngineeringApplied PhysicsL GMicroelectronicsSemiconductor Device

References

	Year	Citations

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