Scientific Reports · 2017 · 105 citations · 49 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsThin FilmsPhase ChangePhase TransitionsSemiconductor Device MaterialsSolid-state Phase TransitionsThin Film Electrical PropertiesThin-film MaterialsInsulator-to-metal TransitionLayered Oxide MaterialsMetal - Insulator Transitions In OxidesMetal-insulator TransitionThin Oxide FilmsThin Oxide LayersThin-film OxidesTransition Metal Oxides
Abstract Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.
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Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
Masaki Nakano, Keisuke Shibuya, Daisuke Okuyama et al. · Nature · 2012 · 753 citations
Thermal Conductivity of Silicon from 300 to 1400°K
H. R. Shanks, Paul D. Maycock, P. H. Sidles et al. · Physical Review · 1963 · 541 citations