A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

Abstract

Both fluorination and oxidation have been employed to passivate defects in indium-gallium-zinc oxide thin-film transistors, leading to enhanced device attributes. It is presently reported that the former is more effective than the latter, requiring shorter process time (hence improved manufacturing efficiency), resulting in reduced initial defect population (hence enhanced scalability), and more robust resistance against process- and stress-induced defect generation (hence improved reliability). It is determined that the fluorine drive-in heat treatment is best conducted in an oxidizing atmosphere.