ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein

Abstract

In this letter, physically transient and fully bioresorbable resistive switching devices based on ZnO are proposed, with excellent resistive switching memory performance shown in Mg/ZnO/W and Mg/ZnO/Mg devices. The devices utilize dissolvable metals including Mg and W with biodegradable silk fibroin substrates that can dissolve while immersed in deionized water after 15 minutes and as fast as 5 minutes in phosphate-buffered saline. The entire memory device consists of dissolvable and bioresorbable electronic materials, which have excellent promise for secure memory systems, implantable medical devices, environment-friendly sensors, disposable consumer devices, and bio-integrated electronics.