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Investigation of breakdown performance in $$L_{g}$$ L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications

Electrical EngineeringEngineeringHigh Voltage EngineeringPower DeviceBreakdown PerformanceElectronic EngineeringApplied PhysicsTime-dependent Dielectric BreakdownPower Semiconductor DeviceL GPower ElectronicsMicroelectronicsPower Electronic Devices