Nanoscale Research Letters · 2017 · 65 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotodetectorsPhotovoltaic DevicesSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBand AlignmentHeterojunction DevicesHeterojunctionsMagnetron SputteringPosition-sensitive DetectionPosition-sensitive DetectorsSemiconductor HeterojunctionsSputtering
Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position of the laser illumination and the considerably high sensitivity of 416.4 mV mm− 1. This sensitivity is much larger than the values in other reported MoS2-based devices. Comparatively, the LPE in the MoS2/p-GaAs heterojunction is much weaker. The mechanisms to the LPE are unveiled by constructing the energy-band alignment of the MoS2/GaAs heterojunctions. The excellent LPE characteristics make MoS2 films combined with GaAs semiconductors promising candidates for the application of high-performance position-sensitive detectors.
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