Dmitry Ruzmetov - Concepedia

Author

Dmitry Ruzmetov

Harvard University ORCID

Also Known As

D Ruzmetov, D. A. Ruzmetov, D. Ruzmetov, Dmitry A. Ruzmetov, Dmitry Ruzmetov, Ruzmetov, Dmitry, Ruzmetov, Dmitry A.

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Harvard University DEVCOM Army Research Laboratory National Institute of Standards and Technology Center for Nanoscale Science and Technology Material Measurement Laboratory

About

Dmitry Ruzmetov is an author at Harvard University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	20	1.5K
2	Applied Physics	18	20	1.5K
3	Natural Sciences	5	5	454
4	Chemistry	4	4	180
5	Chemical Engineering	1	1	20

Dmitry Ruzmetov

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride Dmitry Ruzmetov, Kehao Zhang, Gheorghe Stan, ACS Nano	2016	249
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko, Journal of Applied Physics Electrical EngineeringThin Film Vo2EngineeringPhysicsOxide Electronics	2010	156
Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Dmitry Ruzmetov, D. Heiman, B. Claflin, Physical Review B EngineeringMagnetic ResonanceSpintronic MaterialThin-film VanadiumMetal-insulator Transition	2009	150
Electrolyte Stability Determines Scaling Limits for Solid-State 3D Li Ion Batteries Dmitry Ruzmetov, Vladimir P. Oleshko, Paul M. Haney, Nano Letters EngineeringElectrolyte ThicknessSolid-state 3DTransmission Electron MicroscopeLi Ion Batteries	2011	130
Fabrication, Testing, and Simulation of All-Solid-State Three-Dimensional Li-Ion Batteries A. Alec Talin, Dmitry Ruzmetov, Andrei Kolmakov, ACS Applied Materials & Interfaces Fast Li DiffusionEngineeringBattery TechnologyNanoelectronicsSslibs Lags	2016	128
On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects Gokul Gopalakrishnan, Dmitry Ruzmetov, Shriram Ramanathan Journal of Materials Science Electrical EngineeringElectronic DevicesThin Film PhysicsEngineeringPhysics	2009	121
Structure-functional property relationships in rf-sputtered vanadium dioxide thin films Dmitry Ruzmetov, Kevin T. Zawilski, V. Narayanamurti, Journal of Applied Physics Structure-functional Property RelationshipsThin Film PhysicsEngineeringVo2 TargetThin Film Process Technology	2007	116
Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Dmitry Ruzmetov, Gokul Gopalakrishnan, Jiangdong Deng, Journal of Applied Physics EngineeringVacuum DeviceE-beam LithographyNanoelectronicsNanometrology	2009	110
Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films Dmitry Ruzmetov, Sanjaya D. Senanayake, V. Narayanamurti, Physical Review B Materials ScienceOxide HeterostructuresElectron Transport DataEngineeringPhysics	2008	108
X-ray absorption spectroscopy of vanadium dioxide thin films across the phase-transition boundary Dmitry Ruzmetov, Sanjaya D. Senanayake, Shriram Ramanathan Physical Review B X-ray SpectroscopyEngineeringPhase-transition BoundaryAbsorption SpectroscopyChemistry	2007	86

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