Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition

Abstract

Temperature-dependent magnetotransport measurements in magnetic fields of up to 12 T were performed on thin-film vanadium dioxide $({\text{VO}}_{2})$ across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, $\ensuremath{\sim}0.1\text{ }{\text{cm}}^{2}/\text{V}\text{ }\text{sec}$. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.