Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal

Nanoionics-based resistive switching memories

Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.7K citations

Electrical Engineering, Engineering, Nanotechnology +5

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Materials Science, Non-volatile Memory, Engineering +6

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

Can Wang, Kui-juan Jin, Zhongtang Xu et al. · Applied Physics Letters · 2011 · 362 citations

Materials Science, Magnetism, Multiferroics +14

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

Doo Seok Jeong, H. Schroeder, U. Breuer et al. · Journal of Applied Physics · 2008 · 283 citations

Materials Science, Electrical Resistance, Electrical Engineering +14

Large Resistive Switching in Ferroelectric BiFeO₃ Nano‐Island Based Switchable Diodes

Sahwan Hong, Taekjib Choi, Ji Hoon Jeon et al. · Advanced Materials · 2013 · 219 citations

Engineering, Microscopy, Current-voltage Data +17