IEEE Transactions on Microwave Theory and Techniques · 2017 · 13 citations · 27 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringWireless CommunicationsCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsPower AmplifiersRadio-frequency Integrated CircuitsAmplitude ModulationClass D AmplifiersFlip-chip PackagingPhase ModulationQuadrature Amplitude ModulationRadio Frequency Power AmplifiersRadio-frequency Integrated Circuit DesignRf Cmos Design
This paper demonstrates a wideband CMOS all-digital polar transmitter with flip-chip connection to three high-density-interconnection PCB interposers. The interposers are designed to extract power from a CMOS open-drain inverse Class-D power amplifier core. For a wide frequency range from 0.7 to 3.5 GHz, continuous-wave output power higher than 25.5 dBm and drain efficiency (DE) above 40% are demonstrated. The low-band package achieves a peak power of 29.2 dBm at 1.1 GHz with DE of 60%, the mid-band package outputs 28.8 dBm at 1.5 GHz with DE of 56%, and the high-band package generates 26 dBm at 3 GHz with DE of 49%. The amplitude modulation (AM) is achieved by digitally modulating the switch conductance of the inverse Class-D core, and the on-chip phase modulation is achieved by digitally weighing the in-phase and quadrature bias currents in the IQ mixer. Detailed modulation tests, involving 64 quadrature amplitude modulation (QAM) and 20-MHz WLAN and LTE signals, exhibit excellent power and efficiency at 0.6, 1.2, 1.8, 2.4, 3, and 3.6 GHz. The associated specifications on spectral masks and error vector magnitudes are satisfied.
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Sang-Min Yoo, Jeffrey S. Walling, Eum Chan Woo et al. · IEEE Journal of Solid-State Circuits · 2011 · 206 citations
A Class-G Switched-Capacitor RF Power Amplifier
Sang-Min Yoo, Jeffrey S. Walling, Ofir Degani et al. · IEEE Journal of Solid-State Circuits · 2013 · 121 citations