Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output

When group-III nitrides go infrared: New properties and perspectives

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Engineering, Materials Engineering, Materials Science +17

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 840 citations

Natural Sciences, Materials Science, Physics +17

Efficiency droop in nitride‐based light‐emitting diodes

Joachim Piprek · physica status solidi (a) · 2010 · 834 citations · Full text

Engineering, Electrical Engineering, Optoelectronics +14

Variational calculations on a quantum well in an electric field

G. Bastard, E. E. Méndez, L.L. Chang et al. · Physical review. B, Condensed matter · 1983 · 787 citations

Natural Sciences, Physics, Condensed Matter Physics +16

A self-consistent solution of Schrödinger–Poisson equations using a nonuniform mesh

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Engineering, Electrical Engineering, Computational Physics +16