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A Sub-cm<sup>3</sup> Energy-Harvesting Stacked Wireless Sensor Node Featuring a Near-Threshold Voltage IA-32 Microcontroller in 14-nm Tri-Gate CMOS for Always-ON Always-Sensing Applications
58
Citations
21
References
2017
Year
EngineeringWireless Sensor System14-Nm Tri-gate CmosSensor InterfaceSensor NetworksFunctional Aoas Wsn32-B Intel ArchitectureAlways-on Always-sensing ApplicationsEnergy-efficient CommunicationElectrical EngineeringEnergy HarvestingComputer EngineeringMicroelectronicsLow-power ElectronicsBiomedical SensorsSensorsPower-efficient ComputingSelf-powered NanodevicesNear-threshold Voltage
An energy-harvesting wireless sensor node (WSN) integrates a 14-nm, 0.79-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , 32-b Intel Architecture corebased near-threshold voltage (NTV) microcontroller (MCU) that provides 17-μW/MHz always-ON, always-sensing (AOAS) capability. The MCU implements four independent voltage-frequency islands, managed by an integrated power management unit and features a subthreshold voltage capable on-die oscillator and 42-nm fin-pitch, 8.3-pA leakage-per-bit SRAM. The MCU operates across a wide frequency (voltage) range from 297 MHz (1 V) to 0.5 MHz (308 mV), dissipating 23.5 mW to 21 μW, and achieves 4.8× better energy efficiency at an optimum supply voltage (VOPT) of 370 mV, 3.5 MHz, and 17 pJ/cycle. A functional AOAS WSN incorporating the NTV MCU shows promise for sustained μW operation.
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