Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors

Mou Pal, Umapada Pal, Justo Miguel Gracia y Jiménez et al. · Nanoscale Research Letters · 2012 · 2.6K citations · Full text

Engineering, Inorganic Photochemistry, Chemistry +22

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer et al. · Applied Physics Letters · 1998 · 708 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

Origin of Luminescence from InGaN Diodes

K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 489 citations

Materials Science, Optical Materials, Engineering +14

Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors

Fang Yang, Michael Wilkinson, Elizabeth J. Austin et al. · Physical Review Letters · 1993 · 205 citations

Exciton Absorption Linewidth, Engineering, Localized Excited State +22

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

Shuichiro Yamamoto, Yuji Zhao, Chih‐Chien Pan et al. · Applied Physics Express · 2010 · 183 citations

Yellow-green Light-emitting Diodes, Engineering, Nanoelectronics +17