Nature Communications · 2017 · 213 citations · 27 references
Natural SciencesMaterials SciencePhysicsMagnetic MaterialsNanomaterialsSurface ScienceFerromagnetic MaterialsFerromagnetismMagnetic Properties Of SolidsMagnetism In SolidsSpintronic MaterialsSpintronicsCurrent DensityCurrent-induced Magnetization SwitchingMagnetization In Thin FilmsMagnetization ReversalMagnetoresistive Random-access MemoryPerpendicular Magnetic AnisotropySelf-assembled MonolayersSpin-transfer Torque
Abstract Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 10 6 A·cm −2 , or about 1 × 10 25 electrons s −1 cm −2 . This relatively high current density significantly affects the devices’ structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 10 13 electrons per cm 2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions.
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