Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas - Concepedia

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Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

49

Citations

27

References

2017

Year

J. Margetis, Aboozar Mosleh, Sattar Al-Kabi, Seyed Amir Ghetmiri, Wei Du, Wei Dou, Mourad Benamara, Boxuan Li, Mohammad Mortazavi, Hameed A. Naseem,

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsN2 Carrier GasStrain-relaxed Gesn GrowthReduced Pressure Cvd

References

	Year	Citations

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