HfO₂-Based Highly Stable Radiation-Immune Ferroelectric Memory

Abstract

In this letter, HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric random access memory (FeRAM) with metal-insulator-metal structure is studied for the first time under radiation conditions. V-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based FeRAM devices show high immunity to <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co γ ray radiation. Basic FeRAM parameters, such as leakage current, permittivity, remanent polarization, endurance, and fatigue, show almost no degradation after γ ray radiation with a total dose as high as 12.96 Mrad (SI). Furthermore, the ferroelectric hysteresis loops show no distortion after radiation. The high stability of V-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FeRAM devices under radiation demonstrates their great potential for nuclear and aerospace applications.