The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversion

Abstract

The classical theory of the MOS transistor operating in weak inversion, attributes the slope of the In I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> versus V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> curve to the capture of minority carriers by surface states. The discrepancy between the N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</inf> values given by this theory and by independentt surface states measuring techniques is explained by the influence of surface potential fluctuations. These fluctuations are caused by the statistical distribution of the oxide charge.