Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

Abstract

We report the three-dimensional (3D) mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample preparation. Our approach takes advantage of 3D x-ray Bragg ptychography combined with an optimized inversion process. The excellent agreement with the sample nominal structure validates the reconstruction while the evidence of spatial fluctuations hardly observable by other means underlines the specificities of Bragg ptychography.