Data of ALD Al 2 O 3 rear surface passivation, Al 2 O 3 PERC cell performance, and cell efficiency loss mechanisms of Al 2 O 3 PERC cell

Haibing Huang, Jun Lv, Yameng Bao, Rongwei Xuan, Shenghua Sun, Sami Sneck, Shuo Li, Chiara Modanese, Hele Savin, Aihua Wang,

Data in Brief · 2016 · 12 citations · 4 references

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Abstract

This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al<sub>2</sub>O<sub>3</sub> rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al<sub>2</sub>O<sub>3</sub> rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

References

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