Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)

Abstract

A highly-reliable ferroelectric memory (FeRAM) which ensures retention of data written at a low voltage of 2.5 V and humidity resistance for 10 years under a high temperature of 70/spl deg/C has been successfully developed for the first time. These excellent characteristics have been attained by a newly developed ferroelectric material with mixed superlattice crystal of Y-1 family and a integration technology which makes the use of pl-SiN passivation possible.