Modeling of hot-carrier degradation: Physics and controversial issues

Abstract

We discuss and analyze the main features of hot-carrier degradation (HCD) which are a strong localization at the drain-side of the device, the interplay between single- and multiple-particle processes of Si-H bond dissociation, the transition of the worst-case scenario when going from long- to short-channel devices, and its temperature dependence. These main peculiarities are then linked to the physical processes responsible for HCD. We show that the problem can be conditionally separated into three main subtasks: the carrier transport aspect, the kinetics of defect generation, and modeling of the degraded devices. From this perspective, the most important physics-based models and their validity are discussed. In order to obtain a most accurate description of HCD, we try to minimize the number of empirical parameters by basing our own model on a thorough treatment of carrier transport. Finally, we discuss one of the most important open obstacles towards the understanding of HCD, namely whether bulk oxide traps contribute to the damage or not.