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Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies
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2002
Year
Unknown Venue
Materials ScienceElectrical EngineeringSheet ResistanceNegative Temperature CoefficientEngineeringAdvanced Packaging (Semiconductors)Mixed-signal Integrated CircuitApplied PhysicsCmos TechnologyCapacitance DensityIntegrated CircuitsElectronic PackagingBi-cmos TechnologiesMicroelectronicsBeyond CmosInterconnect (Integrated Circuits)Copper Metallization
High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.