RF-distortion in deep-submicron CMOS technologies

Abstract

The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.