Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes by inserting single spike barriers

Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Balakrishnan, Tom Katona · Nature Photonics · 2008 · 1K citations

Engineering, Materials Engineering, Materials Science +14

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 840 citations

Natural Sciences, Materials Science, Physics +17

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Hideki Hirayama, Noritoshi Maeda, Sachie Fujikawa et al. · Japanese Journal of Applied Physics · 2014 · 547 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Valence band splittings and band offsets of AlN, GaN, and InN

Su‐Huai Wei, Alex Zunger · Applied Physics Letters · 1996 · 340 citations

Natural Sciences, Materials Science, Physics +17

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda et al. · Applied Physics Express · 2010 · 297 citations

Engineering, Electrical Engineering, Materials Science +17