Universal HSPICE model for chalcogenide based phase change memory elements

Abstract

We present a two terminal HSpice model for chalcogenide based phase change memory (CRAM) element. By including physical models of CRAM programming, this model can simulate not only the resistance change by different electrical pulses, but also temperature profile and crystalline fraction during the operation. Furthermore, it was successfully integrated with standard W/R circuit in memory technology. Output of sense amplifier vs writing current amplitude figure corresponded well with the typical R-I curve of CRAM elements.