Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Abstract

A 40nm-gate-length ultra-thin body (UTB) nMOSFET is demonstrated. A self-aligned thin body SOI device has previously been proposed for suppressing the short channel effect. UTB structure can eliminate the punchthrough path between source and drain and provide a more evolutionary alternative to the double-gate MOSFET for deep-sub-tenth micron technology. The advantage of using UTB is illustrated through device simulation (with the aid of Silvaco ATLAS) using simple doping profiles for the body and S/D (simple Gaussian).