A 200 mm SiGe-HBT technology for wireless and mixed-signal applications

Abstract

If SiGe-HBT technology is to successfully compete with GaAs technology in the rapidly emerging wireless communications market, it must demonstrate comparable performance, higher integration levels, compatibility with high volume production, and hence reduced costs. This work describes the first manufacturable 0.5 /spl mu/m SiGe-HBT technology for wireless communications applications which meets these requirements. The technology is currently installed on a 200 mm production line, using a commercial UHV/CVD system for SiGe film growth. AC transistor results (f/sub max/>45 GHz, power added efficiency=66%) demonstrate that this 200 mm SiGe technology is suitable for /spl ges/2.0 GHz RF applications. Record performance was achieved in a 1.2 GS/sec, <1.0 W 12-bit digital-to-analog convertor (DAC). Important manufacturing issues for high performance SiGe-HBTs which are addressed in this work include: SiGe epitaxial film defect densities, long-term device reliability, and device scaling.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>